Semiconductor memory device

ABSTRACT

A semiconductor memory device comprises an input address buffer circuit and a memory cell circuit which are constructed of static logic circuits, an address decoder circuit which is constructed of a dynamic logic circuit, a detector circuit which detects a change in an input address signal, and a pulse generator circuit which is started operating by an output signal of the detector circuit and which provides a clock signal for the dynamic logic circuit. Owing to the detector circuit and the pulse generator circuit, the semiconductor memory device operates without the necessity for any external clock signal.

BACKGROUND OF THE INVENTION

This invention relates to a semiconductor memory device which is constructed of MISFETs (insulated gate field-effect transistors).

MIS semiconductor memories hitherto known can be broadly classified into the dynamic memory and the static memory. The static memory is further divided into the type which requires external clocks (clocked static memory) and the type which does not require any external clock (non-clocked static memory).

The dynamic memory and the clocked static memory are of low power dissipation. However, they require external clock signals. Moreover, since the wait time attributed to the clock operation is needed, the cycle time which determines the operating frequency becomes greater than the access time, to bring about the problem that the memories are difficult of use.

On the other hand, with the non-clocked static memory, the cycle time and the access time become equal, and no external clock is necessary. Therefore, the whole system employing this memory is simple, and the memory is easy of use. The non-clocked static memory, however, has the problem that the power dissipation during the operation is high.

SUMMARY OF THE INVENTION

It is accordingly the principal object of this invention to provide a semiconductor memory device of low power dissipation which does not require any external clock signal.

Another object of this invention is to provide a novel semiconductor memory device which can bring the cycle time and the access time into agreement in the dynamic operation.

Further objects of this invention will become apparent from the following description and the accompanying drawings.

According to this invention, a semiconductor memory device is constructed of a static memory-cell array, an address decoder, an input circuit, an output circuit, etc. The address decoder, the input circuit, the output circuit, etc. are made logic circuits of the dynamic operation.

For the circuits of the dynamic operation, the change of an address input signal from a high level to a low level or the change thereof from the low level to the high level is detected by a detector circuit. On the basis of the detection signal of the detector circuit, the precharges of the dynamic logic circuits are started. The precharges are successively ended in correspondence with the transmission timings of the signal. Thus, the internal circuitry is dynamically operated, so that a low power dissipation is achieved. Simultaneously therewith, as an external characteristic, the agreement between the cycle time and the access time is achieved. A static memory which requires no external clock can be provided by detecting the change of the address input signal as described above.

BRIEF DESCRIPTION OF THE DRAWINGS

Hereunder this invention will be concretely described in connection with embodiments illustrated in the drawings, in which:

FIG. 1 is a block diagram of a semiconductor memory device embodying this invention,

FIG. 2A-G is an operating waveform diagram of the semiconductor memory device shown in FIG. 1,

FIG. 3 is a circuit diagram of a dynamic logic circuit,

FIG. 4 is a circuit diagram of an address buffer circuit,

FIG. 5 shows the details of an OR gate circuit,

FIG. 6 shows the circuit diagram for an address decoder circuit,

FIG. 7 is a circuit diagram of a pulse generator circuit,

FIG. 8 shows the details of a digit line load circuit,

FIG. 9 shows the details of an input circuit and write control circuit, and

FIG. 10 is a circuit diagram of an output circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIG. 1, numerals 1-1' designate X address buffer circuits, and numerals 2-2' Y address buffer circuits.

These circuits are constructed of static logic circuits, and provide true and false address signals a_(o), a_(o) -a₁₁, a₁₁ of MIS levels corresponding to respective address input signal A_(o) -A₁₁. By way of example, if the address input signal A_(o) of the X address buffer circuit 1 is a high level signal of a TTL level, the true address signal a_(o) and false address signal a_(o) to be provided are high level and low level of MIS levels respectively.

Numeral 3 designates an X address decoder circuit, which is constructed of a dynamic logic circuit receiving a clock signal φ₂. The X address decoder circuit 3 receives the 6-bit address signals a_(o), a_(o) -a₅, a₅ which are delivered from the X address buffer circuits 1-1'. Upon fall of the clock signal φ₂, it forms a word line select signal for selecting one of 2⁶ or 64 word lines in a memory-cell array 6.

Numeral 4 indicates a Y address decoder circuit, which is constructed of a dynamic logic circuit receiving the clock signal φ₂. The Y address decoder circuit 4 receives the 6-bit address signals a₆, a₆ -a₁₁, a ₁₁ which are delivered from the Y address buffer circuits 2-2'. Upon the fall of the clock signal φ₂, it forms a digit line select signal for selecting one pair of 2⁶ pairs of digit lines in the memory-cell array 6. The Y address decoder circuit 4 couples the selected digit line among the plurality of digit lines of the memory-cell array 6 to a line l₂₁ under the control of a write control circuit 9. Also, it causes a line l₂₃ to trasfer a signal of the selected digit line.

Shown at 5 is a digit line load circuit. Concretely, it is made up of MISFETs which perform a precharge operation for the digit line by the use of a clock signal φ₁.

The memory cell array 6 is composed of a plurality of static memory cells which are arranged in the shape of a matrix. Although the details are not shown in FIG. 1, each memory cell has a select terminal connected with the word line and input and output terminals connected with the digit lines. In the memory-cell array, the respective select terminals of a plurality of memory cells which are arranged in an identical row are connected to the corresponding word line in common, and the respective input and output terminals of a plurality of memory cells which are arranged in an identical column are connected to the corresponding digit lines.

Although not specifically restricted, the numbers of the word lines and the digit lines are respectively made 64 as described above, so that the number of the memory cells is 64 ×64 or 4,096.

Numeral 7 indicates an input circuit which receives a write input signal as an input and writes it into the memory cell. It is constructed of a dynamic logic circuit.

Numeral 8 indicates an output circuit which serves to deliver a read-out signal from the memory cell. It is constructed of a dynamic logic circuit.

The write control circuit 9 receives a read/write conrol signal R/W as an input. In case of a write operation, it controls the input circuit 7 so as to cause it to effect the write operation. It is constructed of a dynamic logic circuit.

Exclusive OR circuits G₁ -G₁₂ receive as inputs the respective address input signals A to the address buffer circuits (1, 1'-2, 2') ad the inphase outputs a therefrom, and are respectively used for detecting variations in the address input signals A_(o) -A₁₁. More specifically, the output address signal a varies with a lag of an operating delay time of the address buffer circuit over the initiation of the variation of the input address signal A. At an output terminal of the exclusive OR circuit, therefore, a pulse signal which remains at "1" for the delay time is obtained. As a result, the variation of the address signal can be detected in dependence on the presence or absence of the pulse signal. A detection signal being a pulse signal which becomes the high level when any of the address input signals has changed is obtained at an output terminal of an OR circuit G₁₃ which receives the output signals of the respective exclusive OR circuits.

Shown at 10 is a precharge pulse generator circuit. It forms precharge pulses φ₁ -φ₄ whose rises are stipulated by the detection output described above and whose falls are set in correspondence with the application timings of the input signals of the respective dynamic logic circuits.

The operation of the memory circuit in this embodiment will now be described with reference to an operating waveform diagram shown in FIG. 2.

Even if, for an access to the memory circuit, only one of the 12-bit address input signals A_(o) -A₁₁, for example, the address input signal A_(o) changes from the high level to the low level, the output a_(o) changes after the lapse of the operating delay time of the address buffer circuit 1. In consequence, the pulse signal which remains at the high level during the time is provided at the output terminal of the exclusive OR circuit G₁. The pulse signal of the exclusive OR circuit G₁ is applied to the pulse generator circuit 10 through the OR gate circuit G₁₃.

The pulse generator circuit 10 is a one-shot pulse generator circuit which is started by the rise of the pulse from the OR gate circuit G₁₃. It forms the pulse signals φ₁ -φ₄ having predetermined pulse widths to be described later.

The pulse signals φ₁ -φ₄ are employed as the precharging pulses of the respective dynamic logic circuits. In order to provide predetermined logic outputs, the various dynamic logic circuits need to complete the precharging operations after stipulating the respective input levels and to subsequently discharge the precharged charges in accordance with predetermined logic conditions.

Accordingly, the clock signals φ₁ -φ₄ to be provided from the pulse generator circuit 10 have their respective timings set as explained below.

Among the various dynamic logic circuits, the address decoder circuits 3 and 4 need to xecute the logic output operations, in other words, the memory cell selecting operation before the input circuit 7 and the output circuit 8 in order to prevent the output circuit 8 from erroneously responding to the potential of the digit line previous to the selecting operation and also to avoid limiting the time of the write from the input circuit 7. Since the potential of the digit line in the memory-cell array is determined in correspondence with a stored information in the selected memory cell, the digit line load circuit 5 needs to complete the precharge operation before the memory cell selecting operation.

The write control circuit 9 is caused to operate after the input circuit 7 has operated.

Although not specifically restricted, the dynamic logic circuits are constructed so as to effect the precharge operations when the clock signals φ₁ -φ₄ are at the high level and to effect the discharge operations in correspondence with the input signal when the clock signals φ₁ -φ₄ have become the low level.

As illustrated at G in FIG. 2, accordingly, the clock signals φ₁ -φ₄ are brought into the high level substantially simultaneously with the change of the address input signal and are subsequently brought into the low level in succession.

More specifically, the clock signal φ₁ supplied to the digit line load circuit 5 is caused to fall firstly. Thus, the precharge into the digit lines of the memory-cell array is completed before the operations of the decoder circuits 3 and 4.

Subsequently, the clock signal φ₂ is caused to fall, thereby causing the decoder circuits 3 and 4 to carry out the discharge operations corresponding to the input address signal. That is, the word line and the digit line as predetermined are selected by the decoder circuits, to assign the specified memory cell.

By subsequently causing the clock signal φ₃ of the input and output circuits 7 and 8 to fall, these circuits are rendered operative. The read-out operation is started by the output circuit 8.

The precharge pulse φ₄ of the write control circuit 9 is caused to fall after the completion of the operation of the input circuit. When the write control signal R/W indicates a write instruction level, the write into the memory cell is executed with the input signal. When the control signal R/W is at a read instruction level, the readout operation is continued.

In the sequence of the operations of the respective dynamic logic circuits as described above, the falls or pulse widths of the timing pulses φ₁ -φ₄ are set.

As described above, according to the circuit of this embodiment, the internal circuits are reset (precharged) upon the change of the address input signal (upon the access to the memory) and they successively start operating in correspondence with the transmission timings of the signals, and the wait times necessary for the respective circuits are automatically included in the interval from the change of the address input to the output of data. Therefore, it is unnecessary to establish after the data output any wait time during which the operation is impossible, and the access time and the cycle time become equal when the memory is externally viewed. The memory can be used similarly to the non-clocked static memory in the prior art and does not require any external clock, so that the memory system is simplified and becomes easy of use.

As shown in FIG. 3, the dynamic logic circuit is composed of a precharging MISFET Q₁, a logic block 11, and a discharging MISFET Q₂. Since only a charging current into a load capacitance C_(L) in the precharging operation constitutes a conduction current, the power dissipation can be rendered low. Besides, since the logic output is stipulated by the discharging operation of the load capacitance C_(L), the operating delay time can be shortened and hence the operating speed can be rendered high.

FIG. 4 shows a concrete circuit arrangement of the address buffer circuit 1 as well as the exclusive OR circuit G₁.

In the drawings referred to hereinbelow, MISFETs Q₃, Q₅, Q₇ etc. are indicated by a symbol different from that of MISFETs Q₄, Q₆, Q₈ etc., and they are depletion type MISFETs. The other MISFETs Q₄, Q₆, Q₈ etc. are of the enhancement type.

The address buffer circuit 1 is composed of MISFETs Q₃ -Q₁₂. The depletion type MISFET Q₃ with its gate and source connected and the enchancement type MISFET Q₄ are connected in series between a power supply V_(DD) and the earth point of the circuitry, to constitute a first inverter circuit. Likewise, a second inverter circuit is constructed of the MISFETs Q₅ and Q₆, and a third inverter circuit the MISFETs Q₇ and Q₈. A first push-pull circuit is constructed of the MISFETs Q₉ and Q₁₀, while a second push-pull circuit is constructed of the MISFETs Q₁₁ and Q₁₂.

The first to third inverter circuits and the first and second push-pull circuits are connected in cascade as shown in the figure.

The address buffer circuit 1 receives the address input signal A_(o) as shown at A in FIG. 2 at its input terminal or the gate electrode of the MISFET Q₄, thereby to deliver the address signal a_(o) as shown at B in FIG. 2to its true-value output terminal or the common juncture between the source electrode of the MISFET Q₁₁ and the drain electrode of the MISFET Q₁₂ after delay times of the inverter circuits and the push-pull circuits.

The exclusive OR circuit G₁ is composed of a NOR circuit made up of MISFETs Q₁₃ -Q₁₅, and a NAND-NOR circuit made up of MISFETs Q₁₆ -Q₁₉. As shown at E in FIG. 2, it delivers to a line l₁ a pulse signal which becomes the high level during the disagreement between the address input signal A_(o) and true-value address signal a_(o) of the address buffer circuit 1.

FIG. 5 shos a circuit arrangement of the OR gate circuit G₁₃. This circuit G₁₃ is composed of a NOR circuit made up of MISFETs Q₂₀ -Q₂₆, and an inverter circuit made up of MISFETs Q₂₇ and Q₂₈. It delivers to a line l₁₃ the OR signal of the output signals of the exclusive OR circuits G₁ -G₁₂ as applied to lines l₁ -l₁₂.

FIG. 6 shows a circuit arrangement of the address decoder circuit for selecting one word line. As shown in the figure, the address decoder circuit is made up of MISFETs Q₃₀ -Q₃₈.

The true and false address signals a_(o), a_(o) -a₅, a₅ of the six X-address buffer circuits 1-1' are selected and applied to the respective gate electrodes of the six MISFETs Q₃₁ -Q₃₆ through lines l₃₀ -l₃₅. The clock signal φ₂ is applied to the gate electrodes of the MISFETs Q₃₀ and Q₃₈, while the inverted signal φ₂ of the clock signal φ₂ is applied to the drain electrode of the MISFET Q₃₇.

When the clock signal φ₂ is made the high level by the pulse generator circuit 10, the MISFET Q₃₀ becomes the "on" state. At this time, if all the MISFETs Q₃₁ -Q₃₆ are in the "off" state due to the address signals of the lines l₃₀ -l₃₅, the capacitance CL₁ of a line l₃₆ is charged substantially to the high level of the supply voltage V_(DD) through the MISFET Q₃₀. When the clock signal φ₂ has become the low level, the MISFET Q₃₀ falls into the "off" state. At this time, the signal level of the line l₃₆ is held in the capacitance CL₁. By way of example, if all the address signals applied to the lines l₃₀ -l₃₅ are of the low level so as to select the line l₃₆, the level of the line l₃₆ is held at the high level by the capacitance CL₁. If at least one of the lines l₃₀ -l₃₅ is of the high level, charges in the capacitance CL₁ are discharged through the MISFET in the "on" state among the MISFETs Q₃₁ -Q₃₆. As a result, the line l₃₆ becomes the low level.

The MISFET Q₃₈ is in the "on" state during the period during which the clock signal φ₂ is at the high level. At this time, a capacitance CL₂ in a word line l₃₇ is precharged substantially to the earth potential by the MISFET Q₃₈ in the "on" state. The MISFET Q₃₇ is in the "on" state while the line l₃₆ is at the high level. Since, at this time, the inverted clock signal φ₂ is at the low level, current which flows through the MISFETs Q₃₇ and Q₃₈ in series becomes substantially zero.

Upon the fall of the clock signal φ₂ to the low level, the MISFET Q₃₈ turns into the "off" state. At this time, the inverted clock signal φ₂ rises to the high level. If the line l₃₆ is selected, that is, it is of the high level, the MISFET Q₃₇ turns into the "on" state, with the result that the capacitance CL₂ of the word line l₃₇ is discharged substantially to the high level of the inverted clock signal φ₂. If the line l₃₆ is not selected, the MISFET Q₃₇ is in the "off" state, so that the capacitance CL₂ remains at the precharged low level.

The X-address decoder circuit 3 includes the unit decoder circuits as shown in FIG. 6 to the number of word lines.

FIG. 7 shows a circuit arrangement of the pulse generator circuit 10. This pulse generator circuit 10 is constructed of an R-S flip-flop circuit made up of MISFETs Q₄₀ -Q₄₅, a plurality of delay circuits made up of MISFETs Q₄₆ -Q₆₂, and a plurality of NOR circuits made up of MISFETs Q_(63-Q) ₇₆.

The R-S flip-flop circuit delivers a high level signal to a line l₄₀ and a low level signal to a line l₄₁ in the reset state thereof.

Under this state, the first unit delay circuit which consits of the MISFETs Q₄₆ -Q₄₉ and a capacitance CL₃ delivers a signal of low level to a line l₄₃ in response to the input signal of low level from the line l₄₁. The first NOR circuit which consists of the MISFETs Q₆₃ -Q₆₅ delivers the clock signal φ₁ of low level in response to the input signal of high level from the line l₄₀.

Likewise, the second delay circuit which consists of the MISFETs Q₅₀ -Q₅₃ and a capacitance CL₄, the third delay circuit which consists of the MISFETs Q₅₄ -Q₅₇ and a capacitance CL₅, and the fourth delay circuit which consists of the MISFETs Q₅₈ -Q₆₂ and a capacitance CL₆ deliver low level signals to lines l₄₄, l₄₅, and l₄₆ respectively. Also the second NOR circuit which consists of the MISFETs Q₆₆ -Q₆₈, the third NOR circuit which consists of the MISFETs Q₇₁ -Q₇₃, and the fourth NOR circuit which consists of the MISFETs Q₇₄ -Q₇₆ deliver the clock signals φ₂, φ₃, and φ₄ of low level respectively. An inverter circuit which consists of the MISFETs Q₆₉ and Q₇₀ and which receives the clock signal φ₂ delivers the inverted clock signal φ₂ of high level.

When, in response to the change of the address input signals A_(o) -A₁₁, the pulse signal of high level is applied from the OR gate circuit G₁₃ (refer to FIG. 1 or 5) to the line l₁₃, the R-S flip-flop circuit falls into the set state.

Since, owing to the set state, the signal of the line l₄₁ turns from the low level to the high level, the MISFET Q₄₇ of the first delay circuit as has been in the "off" state changes into the "on" state. The capacitance CL₃ which has been changed substantially to the supply voltage V_(DD) through the MISFET Q₄₆ in advance begins to be discharged through the drain-source current path of the MISFET Q₄₇ now in the "on" state. After a predetermined time, the charged voltage of the capacitance CL₃ becomes lower than the input logic threshold voltage of an inverter circuit which consists of the MISFETs Q₄₈ and Q₄₉. That is, the first delay circuit delivers to the line l₄₃ the signal which turns from the low level to the high level with a predetermined delay time after the signal of the line l₄₁ has become the high level.

The first NOR circuit Q₆₃ -Q₆₅ receives the low level signals at the pair of input lines l₄₀ and l₄₃ and accordingly provides the clock signal φ₁ of high level during the delay time of the first delay circuit after the R-S flip-flop circuit has been set.

The second delay circuit delivers to a line l₄₄ a signal which becomes the high level with a predetermined delay time after the signal of the line l₄₃ has become the high level. The second NOR circuit Q₆₆ -Q₆₈ provides the clock signal φ₂ which is at the high level during the delay times of the first and second delay circuits.

The third and fourth delay circuits and the third and fourth OR gate circuits operate similarly and successively.

When the fourth delay circuit delivers a high level signal to a line l₄₆, the R-S flip-flop circuit is returned to the reset state.

FIG. 8 shows circuit arrangements of the digit line load circuit 5, the memory-cell array 6 and the Y-address decoder circuit 4. In this figure, the Y-address decoder circuit has only a part thereof illustrated on account of limited space.

The memory-cell array includes a plurality of memory cells MS₁₁ -MS₆₄₆₄ which are arranged in the shape of a matrix.

As exemplified by the memory cell MS₁₁, the memory cell is constructed of transfer MISFETs Q₁₀₂ and Q₁₀₃, and a flip-flop circuit which is made up of MISFETs Q₁₀₀ and Q₁₀₁ and resistances R₁ and R₂ connected between the drains of the respective MISFETs Q₁₀₀ and Q₁₀₁ and a power supply terminal. The gate electrodes of the transfer MISFETs Q₁₀₂ and Q₁₀₃ are used as a select terminal, and terminals of the transfer MISFETs Q₁₀₂ and Q₁₀₃ as connected with digit lines are used as input and output terminals.

As apparent from the illustration, the select terminals of the memory cells arranged in an identical row, for example, the memory cells MS₁₁ -MS₁₆₄ are connected to the common word line l₃₇, while the input and output terminals of the memory cells arranged in an identical column, for example, the memory cells MS₁₁ -MS₆₄₁ are connected to a common pair of digit lines DG₁₁ and DG₀₁.

A digit line load circuit which consists of MISFETs Q₈₀ -Q₈₂ and which receives the clock signal φ₁ is connected to the pair of digit lines DG₁₁ and DG₀₁. Further connected to the pair of digit lines DG₁₁ and DG₀₁ are a pre-sense amplifier PS₁ consisting of MISFETs Q₁₁₀ -Q₁₁₄, a sense amplifier SA₁ consisting of MISFETs Q₁₂₀ -Q₁₂₂ and a digit line selector YD₁ consisting of MISFETs Q₁₃₀ -Q₁₃₃, the operations of which are respectively controlled by a digit line select signal applied to a line l₅₀.

Likewise, a digit line load circuit Q₈₃ -Q₈₅, a pre-sense amplifier PS₆₄, a sense amplifier SA₆₄ and a digit line selector YD₆₄ are connected to a pair of digit lines DG₁₆₄ and DG₀₆₄.

The drain electrodes of the MISFETs Q₁₂₀ and Q₁₂₁ in the sense amplifier SA₁ are used as output terminals. The corresponding output terminals of the sense amplifiers SA₁ -SA₆₄ are connected to respective data lines d_(o) and d_(o) in common as illustrated in the figure.

The data output lines d_(o) and d_(o) are connected to lines of the same symbols in the output circuit 8 shown in FIG. 10.

The source electrode of one of the MISFETs Q₁₃₂ and Q₁₃₃ in the digit line selector YD₁ is connected to a data input line d_(i) or d_(i) along with the corresponding electrode in the digit line selector YD₆₄.

The data input lines d_(i) and d_(i) are connected to lines of the same symbols in the input circuit 7 shown in FIG. 9.

The outputs a₆, a₆ -a₁₁, a₁₁ of the respective Y-address buffer circuits 2-2' in FIG. 1 are supplied to Y decoder circuits (not shown) each of which has substantially the same construction as that of the X decoder circuit shown in FIG. 6. Digit line select signals are applied to lines l₅₀ -l₅₁ from the Y decoder circuits.

When the clock signal φ₁ has become the high level in response to the change of the address input signals A_(o) -A₁ (refer to FIG. 1), the MISFETs Q₈₀ -Q₈₂ and Q₈₃ -Q₈₅ of the digit line load circuit 5 fall into the "on" state, and the capacitances (not shown) of the digit lines are precharged substantially to the supply voltage V_(DD). In this case, the MISFET Q₈₂ acts to forcibly equalize the potentials of the digit lines DG₁₁ and DG₀₁. The MISFET Q₈₅ acts similarly to the MISFET Q₈₂.

The respective circuits in FIG. 8 operate as follows in case where, by way of example, the address input signals A_(o) -A₁₁ have assigned the memory cell MS₁₁.

Upon the fall of the clock signal φ₂, the word line select signal on the word line l₃₇ and the digit line select signal on the line l₅₀ become the high level. The word line select signal and the digit line select signal on the other lines l₃₈ and l₅₁ remain at the low level.

Owing to the high level signal of the word line l₃₇, the transfer MISFETs Q₁₀₂ and Q₁₀₃ of the memory cell MS₁₁ turn into the "on" state. If, for example, the MISFET Q₁₀₀ is in the "on" state in correspondence with the stored content of the memory cell MS₁₁, the charges in the capacitance of the digit line DG₁₁ begin to be discharged through the MISFETs Q₁₀₂ and Q₁₀₀. As a result, the potentials of the digit lines DG₁₁ and DG₀₁ begin to get unbalanced in accordance with the stored content of the memory cell MS₁₁.

The pre-sense amplifier PS₁ starts operating owing to the digit line select signal of the line l₅₀, and amplifies the unbalance between the potentials of the digit lines DG₁₁ and DG₀₁.

The sense amplifier SA₁ starts operating owing to the same digit line select signal as described above. In case where the MISFET Q₁₀₀ of the memory cell MS₁₁ is in the "on" state as stated above, the digit line DG₁₁ becomes the low level and the digit line DG₀₁ the high level, and hence, the MISFET Q₁₂₀ of the sense amplifier SA₁ turns into the "off" state and the MISFET Q₁₂₁ into the "on" state. As a result, a current path is established between one data output line d_(o) and the earth point of the circuitry by the MISFETs Q₁₂₁ and Q₁₂₂ in the "on" state in the sense amplifier SA₁. The signals of the data lines d_(o) and d_(o) are read out through the output circuit 8 to be explained later.

In the digit line selector YD₁, the MISFET Q₁₃₁ turns from the "on" state to the "off" state upon the fall of the clock signal φ₂. The MISFET Q₁₃₀ turns into the "on" state upon condition that the digit line select signal of the line l₅₀ becomes the high level in synchronism with the fall of the clock signal φ₂. During the period during which the clock signal φ₂ is at the high level, the MISFETs Q₁₃₂ and Q₁₃₃ are in the "off" state because the potential of their gate electrodes is at the low level owing to the MISFET Q₁₃₁.

When the digit line select signal on the line l₅₀ has become the high level, the MISFETs Q₁₃₂ and Q₁₃₃ remain at the "off" state if a write control signal r/w is at the low level.

If the write control signal r/w is at the high level when the digit line select signal has become the high level, the MISFETs Q₁₃₂ and Q₁₃₃ turn into the "on" state because their gate electrodes are brought into the high level of the write control signal r/w through the MISFET Q₁₃₀. When the MISFETs Q₁₃₂ and Q₁₃₃ have turned into the "on" state as described above, the potentials of the digit lines DG₁₁ and DG₀₁ are forcibly determined into the potentials of the data input lines d_(i) and d_(i). As a result, data is written into the memory cell MS₁₁ from the digit lines DG₁₁ and DG₀₁.

FIG. 9 shows circuit arrangements of the input circuit 7 and the write control circuit 9.

Although not specifically restricted, the write control circuit 9 is constructed, as shown in the figure, of a first NOR circuit which consists of MISFETs Q₁₅₈ -Q₁₆₁ and a bootstrap capacitance CL₉, and a second NOR circuit which consists of MISFETs Q₁₆₂ -Q₁₆₄. This circuit 9 receives the external write control signal R/W and the clock signal φ₄ from the pulse generator circuit 10 (refer to FIG. 1 or 7). When the signal R/W is at the low level, that is, it is of the write instruction, the output signal r/w becomes the high level upon the fall of the clock signal φ₄ from the high level to the low level. When the signal R/W is at the high level, the output signal r/w remains at the low level.

As shown in the figure, the input circuit 7 is constructed of an inverter circuit which consists of MISFETs Q₁₄₄ -Q₁₄₆ and which receives the clock signal φ₃ and the write control signal r/w, a first NOR circuit which consists of MISFETs Q₁₄₀ -Q₁₄₃ and a bootstrap capacitance CL₇ and which receives the input data signal IN and the output of the inverter circuit, a second NOR circuit which consists of MISFETs Q₁₄₇ -Q₁₅₀ and a bootstrap capacitance CL₈ and which receives the outputs of the first NOR circuit and the inverter circuit, a first push-pull circuit which consists of the MISFETs Q₁₅₁ and Q₁₅₂, a second push-pull circuit which consists of MISFETs Q₁₅₃ and Q₁₅₄, and a precharge circuit which consists of MISFETs Q₁₅₅ -Q₁₅₇ and which receives the clock signal φ₃.

The input circuit 7 delivers the signal of high level to the output lines d_(i) and d_(i) irrespective of the input data signal during the precharge period, that is, during the period during which the clock signal φ₃ is at the high level and the period during which the write control signal r/w is at the low level.

The input circuit 7 delivers a signal inphase with the input data signal IN to the output line d_(i) and a signal of the opposite phase to the output line d_(i) upon condition that the clock signal φ₃ becomes the low level and that the write control signal r/w becomes the high level in synchronism with the fall of the clock signal φ₄.

FIG. 10 shows a circuit arrangement of the output circuit 8. An amplifier circuit is constructed of MISFETs Q₁₇₀ -Q₁₇₃, a first push-pull circuit is constructed of MISFETs Q₁₇₅ and Q₁₇₆, a second push-pull circuit is constructed of MISFETs Q₁₇₇ and Q₁₇₈, and a third push-pull circuit is constructed of MISFETs Q₁₇₉ and Q₁₈₀. The amplifier Q₁₇₀ -Q₁₇₃ has its operation controlled by a MISFET Q₁₈₃, and the first and second push-pull circuits have their operations controlled by a MISFET Q₁₇₄. In the amplifier circuit Q₁₇₀ -Q₁₇₃, the depletion-mode load MISFETs Q₁₇₀ and Q₁₇₁ are also used as loads for the MISFETs Q₁₂₀ and Q₁₂₁ in each of the sense amplifiers SA₁ -SA₆₄ in FIG. 8.

While the clock signal φ₃ is at the high level, the output of an inverter circuit which consists of MISFETs Q₁₈₁ and Q₁₈₂ is at the low level. At this time, the MISFETs Q₁₈₃ and Q₁₇₄ are in the "off" state, so that the amplifier circuit and the first and second push-pull circuits are not in the operative state.

When the clock signal φ₃ has fallen from the high level to the low level, the amplifier circuit begins to operate and amplifiers the difference of the levels of the data output lines d_(o) and d_(o). Simultaneously, the first and second push-pull circuits begin to operate and deliver signals of opposite phases to each other in correspondence with the signals of the data lines d_(o) and d_(o). As a result, an output signal OUT is provided from the third push-pull circuit.

This invention is not restricted to the foregoing embodiments. The sequence of the operations of the dynamic logic circuits can be variously altered in accordance with respective memory systems. Also the outputs of the pulse generator circuit 10 can be altered accordingly. 

I claim:
 1. A semiconductor memory device comprising an input address buffer circuit and a memory cell circuit which are constructed of static logic circuits, an address decoder circuit which is constructed of a dynamic logic circuit, a detector circuit which detects a change in an output signal of said address buffer circuit, and a pulse generator circuit which is started operating by an output signal of said detector circuit and which provides a clock signal for said address decoder circuit.
 2. A semiconductor memory device according to claim 1, wherein said detector circuit is constructed so as to detect a delay time of an output signal of said input address buffer circuit relative to an input address signal thereof.
 3. A semiconductor memory device according to claim 1, wherein said address decoder circuit is constructed so as to start a precharge operation upon a rise of said clock signal and to provide an output signal corresponding to an input signal upon a fall of said clock signal.
 4. A semiconductor memory device as in claim 1, wherein said input address buffer circuit is unclocked.
 5. A semiconductor memory device comprising an input address buffer circuit and a memory cell circuit which are constructed of static logic circuits, an address decoder circuit which is constructed of a dynamic logic circuit, a detector circuit which detects a change in an input address signal, and a pulse generator circuit which is started operating by an output signal of said detector circuit and which provides a clock signal for said dynamic logic circuit,wherein said pulse generator circuit comprises a flip-flop circuit and a signal delay circuit, and said flip-flop circuit is constructed so as to be set by said output signal of said detector circuit and to be reset by an output signal of said delay circuit. 